Near-eye display technology is a rapidly growing field owing to the recent emergence of
augmented and mixed reality. Ultrafast response time, high resolution, high luminance, and …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

It is demonstrated by in situ reflection-high-energy-electron-diffraction studies that the growth
of hexagonal GaN on AlN occurs either purely in a layer-by-layer mode or in a Stranski …

GaN quantum dots (QDs) in an AlN matrix have been grown on Si (111) by molecular-beam
epitaxy. The growth of GaN deposited at 800° C on AlN has been investigated in situ by …

Controlled introduction of impurities forms the basis of much of semiconductor technology;
indeed p-type (acceptor-doped) and n-type (donor-doped) layers and the junctions between …

Using in situ wafer-curvature measurements of thin-film stress, we determine the critical
thickness for strain relaxation in Al x Ga 1− x N∕ Ga N heterostructures with 0.14⩽ x⩽ 1⁠ …

The strain-relaxation phenomena during the early stages of plasma-assisted molecular-
beam epitaxy growth of lattice-mismatched wurtzite (0001) AlN/GaN heterostructures have …

We report a systematic study of< 100> epitaxial films of magnetite (Fe 3 O 4) of thickness
300–2000 Å, grown on single-crystal substrates (MgO, MgAl 2 O 4, and SrTiO 3) using …

The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type
GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions …

GaN and Al x Ga 1− x N alloys were grown by gas source molecular beam epitaxy using NH
3. High quality GaN layers with smooth surfaces being obtained, reflection high-energy …