Tuneable electronic properties in graphene

MF Craciun, S Russo, M Yamamoto, S Tarucha - Nano Today, 2011 - Elsevier
Novel materials are in great demand for future applications. The discovery of graphene, a
one atom thick carbon layer, holds the promise for unique device architectures and …

[HTML][HTML] Properties of suspended graphene membranes

CN Lau, W Bao, J Velasco Jr - Materials Today, 2012 - Elsevier
Graphene, a single layer of graphite, is a unique two-dimensional electron system as well as
nature's thinnest elastic membrane. Here we review and describe our work on suspended …

Controllable pn junction formation in monolayer graphene using electrostatic substrate engineering

HY Chiu, V Perebeinos, YM Lin, P Avouris - Nano letters, 2010 - ACS Publications
We investigate electric transport in graphene on SiO2 in the high field limit and report on the
formation of pn junctions. Previously, doping of graphene has been achieved by using …

Local compressibility measurements of correlated states in suspended bilayer graphene

J Martin, BE Feldman, RT Weitz, MT Allen, A Yacoby - Physical review letters, 2010 - APS
Bilayer graphene has attracted considerable interest due to the important role played by
many-body effects, particularly at low energies. Here we report local compressibility …

Magnetoconductance Oscillations and Evidence for Fractional Quantum Hall States<? format?> in Suspended Bilayer and Trilayer Graphene

W Bao, Z Zhao, H Zhang, G Liu, P Kratz, L Jing… - Physical review …, 2010 - APS
We report pronounced magnetoconductance oscillations observed on suspended bilayer
and trilayer graphene devices with mobilities up to 270 000 cm 2/V s. For bilayer devices, we …

Facile formation of graphene P–N junctions using self-assembled monolayers

J Baltazar, H Sojoudi, SA Paniagua… - The Journal of …, 2012 - ACS Publications
Monolithic and patterned aminopropyltriethoxysilane (APTES) layers are used to create n-
doped graphene, graphene p–n junctions, and FET devices containing p–n junctions in the …

Transconductance Fluctuations as a Probe for Interaction-Induced Quantum<? format?> Hall States in Graphene

DS Lee, V Skákalová, RT Weitz, K Von Klitzing… - Physical Review Letters, 2012 - APS
Transport measurements normally provide a macroscopic, averaged view of the sample so
that disorder prevents the observation of fragile interaction-induced states. Here, we …

[HTML][HTML] Single gate pn junctions in graphene-ferroelectric devices

JH Hinnefeld, R Xu, S Rogers, S Pandya… - Applied Physics …, 2016 - pubs.aip.org
Graphene's linear dispersion relation and the attendant implications for bipolar electronics
applications have motivated a range of experimental efforts aimed at producing pn junctions …

Quantum transport and field-induced insulating states in bilayer graphene pnp junctions

L Jing, J Velasco Jr, P Kratz, G Liu, W Bao… - Nano …, 2010 - ACS Publications
We perform transport measurements in high quality bilayer graphene pnp junctions with
suspended top gates. At a magnetic field B= 0, we demonstrate band gap opening by an …

Interplay of fractional quantum Hall states and localization in quantum point contacts

S Baer, C Rössler, EC de Wiljes, PL Ardelt, T Ihn… - Physical Review B, 2014 - APS
We investigate integer and fractional quantum Hall states in quantum point contacts (QPCs)
of different geometries, defined in AlGaAs/GaAs heterostructures employing different doping …