Simulation comparison of hot-carrier degradation in nanowire, nanosheet and forksheet FETs
Forksheet (FS) FETs are a novel transistor architecture consisting of vertically stacked nFET
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …
and pFET sheets at opposite sides of a dielectric wall. The wall allows reducing the p-to …
3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
Evaluating forksheet FET reliability concerns by experimental comparison with co-integrated nanosheets
A novel forksheet (FSH) FET architecture has been proposed earlier, consisting of vertically
stacked n-and p-type sheets at opposing sides of a dielectric wall, particularly beneficial for …
stacked n-and p-type sheets at opposing sides of a dielectric wall, particularly beneficial for …
Understanding and modeling opposite impacts of self-heating on hot-carrier degradation in n-and p-channel transistors
We extend our framework for hot-carrier degradation (HCD) modeling by covering the
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
impact of self-heating (SH) on HCD. This impact is threefold:(i) perturbation of carrier …
The impact of self-heating and its implications on hot-carrier degradation–A modeling study
A combination of hot-carrier degradation (HCD) and self-heating (SH) was acknowledged to
be the most detrimental reliability issue in ultra-scaled field-effect-transistors (FETs) with …
be the most detrimental reliability issue in ultra-scaled field-effect-transistors (FETs) with …
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors
We simulate relative changes of the saturation drain current during hot-carrier degradation
(HCD) in dynamically-doped (D 2) and" traditional" planar complementary metal-oxide …
(HCD) in dynamically-doped (D 2) and" traditional" planar complementary metal-oxide …
Reliability challenges in Forksheet Devices
E Bury, M Vandemaele, J Franco… - 2023 IEEE …, 2023 - ieeexplore.ieee.org
The forksheet (FSH) device architecture is a possible candidate towards continued logic cell
downscaling. It consists of vertically stacked n-and p-type sheets at opposing sides of a …
downscaling. It consists of vertically stacked n-and p-type sheets at opposing sides of a …
Physical modeling the impact of self-heating on hot-carrier degradation in pNWFETs
We develop and validate a physics-based modeling framework for coupled hot-carrier
degradation (HCD) and self-heating (SH). Within this framework, we obtain the lattice …
degradation (HCD) and self-heating (SH). Within this framework, we obtain the lattice …
Semiclassical Simulations of Hot Electrons in Gate-All-Around Silicon MOSFETS
M Reaz - 2021 - search.proquest.com
Abstract The Monte Carlo technique is employed for self-consistently solving the Boltzmann-
Poisson transport equations with full electronic and phonon energy bands to simulate the …
Poisson transport equations with full electronic and phonon energy bands to simulate the …