Methods of controlling the step coverage and pattern loading of a layer on a substrate are
provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride …

Described herein are methods of forming dielectric films comprising silicon, such as, but not
limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that …

Methods of processing films on substrates are provided. In one aspect, the methods
comprise treating a patterned low dielectric constant film after a photoresist is removed from …

The present invention discloses a process for depositing a carbon containing silicon oxide
film, or a carbon containing silicon nitride film having enhanced etch resistance. The process …

A method of forming an interconnect for a semiconductor device using triple hard layers,
comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect …

Embodiments of the present invention provide a method for forming a dielectric film on a
Substrate comprising placing a substrate with at least one formed feature across a surface of …

Improved methods for stripping photoresist and removing etch-related residues from
dielectric materials are provided. In one aspect of the invention, methods involve removing …

Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine
containing gas. An inert gas is introduced to the plasma downstream of the plasma source …

In the following detailed description of the present inven tion, numerous specific
embodiments are set forth in order to provide a thorough understanding of the invention …

A method and apparatus for depositing a low dielectric constant film by reaction of an
organosilane or organosiloxane compound and an oxidizing gas at a low RF power level …