Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

We report on high performance Al x Ga 1− x N-based solar-blind ultraviolet photodetector
(PD) array grown on sapphire substrate. First, high quality, crack-free AlN template layer is …

Stretchable devices with good transparency offer exciting new applications over the existing
technologies, but remarkable difficulties remain in the fabrication of transparent and …

In this paper, AlN templates with different mesothermal AlN (MT-AlN) interlayer deposition
cycles are prepared via metal–organic chemical vapor deposition (MOCVD) at first. The …

Blue and violet light-emitting devices based on III-nitrides caused an ongoing revolution in
general lighting. One of the highly deliberated discussions in this field is devoted to the …

Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …

A simple and inexpensive method for growing Ga 2 O 3 using GaAs wafers is demonstrated.
Si-doped GaAs wafers are heated to 1050° C in a horizontal tube furnace in both argon and …

The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …