The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Abstract This Technical Review collects values of selected performance characteristics of
semiconductor spin qubits defined in electrically controlled nanostructures. The …

Quantum processor architectures must enable scaling to large qubit numbers while
providing two-dimensional qubit connectivity and exquisite operation fidelities. For …

Abstract Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction
band valleys, which compete with the spin degree of freedom in the formation of qubits …

Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots
operate successfully and connecting these would permit scalable quantum computation …

We identify the dominant source for low-frequency spin qubit splitting noise in a highly
isotopically-purified silicon device with an embedded nanomagnet and a spin echo decay …

Silicon spin qubits stand out due to their very long coherence times, compatibility with
industrial fabrication, and prospect to integrate classical control electronics. To achieve a …

The electrical characterisation of classical and quantum devices is a critical step in the
development cycle of heterogeneous material stacks for semiconductor spin qubits. In the …

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or
tunable energy splittings of the valley states associated with degenerate conduction band …

Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …