Giant, Level-Dependent g Factors in InSb Nanowire Quantum Dots

HA Nilsson, P Caroff, C Thelander, M Larsson… - Nano …, 2009 - ACS Publications
We report on magnetotransport measurements on InSb nanowire quantum dots. The
measurements show that the quantum levels of the InSb quantum dots have giant g factors …

Energy levels of few-electron quantum dots imaged and characterized by atomic force microscopy

L Cockins, Y Miyahara, SD Bennett… - Proceedings of the …, 2010 - National Acad Sciences
Strong confinement of charges in few-electron systems such as in atoms, molecules, and
quantum dots leads to a spectrum of discrete energy levels often shared by several …

Electrically tuned spin–orbit interaction in an InAs self-assembled quantum dot

Y Kanai, RS Deacon, S Takahashi, A Oiwa… - Nature …, 2011 - nature.com
Electrical control over electron spin is a prerequisite for spintronics spin-based quantum
information processing. In particular, control over the interaction between the orbital motion …

Large anisotropy of the spin-orbit interaction in a single InAs self-assembled quantum dot

S Takahashi, RS Deacon, K Yoshida, A Oiwa… - Physical review …, 2010 - APS
The anisotropy of the spin-orbit interaction (SOI) is studied for a single uncapped InAs self-
assembled quantum dot holding just a few electrons. The SOI energy is evaluated from …

Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

K Hamaya, M Kitabatake, K Shibata, M Jung… - Applied Physics …, 2007 - pubs.aip.org
Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study
the Kondo effect in the electron transport through a semiconductor QD with an odd number …

Photon-Assisted Tunneling through Self-Assembled InAs Quantum Dots<? format?> in the Terahertz Frequency Range

K Shibata, A Umeno, KM Cha, K Hirakawa - Physical Review Letters, 2012 - APS
We have investigated terahertz (THz) photon-assisted tunneling in single self-assembled
InAs quantum dots (QDs). Two types of photon-assisted tunneling processes have been …

Anisotropy effect on the nonlinear optical properties of a three-dimensional quantum dot confined at the center of a cylindrical nano-wire

G Safarpour, MA Izadi, M Novzari, E Niknam… - Physica E: Low …, 2014 - Elsevier
The effect of geometrical anisotropy is numerically investigated on the linear and nonlinear
optical properties of a GaAs quantum dot which is located at the center of a Ga 1-x Al x As …

Carrier transport and dielectric permittivity of SiO2 films containing ion-beam synthesized InSb nanocrystals

P Zukowski, TN Koltunowicz, K Czarnacka… - Journal of Alloys and …, 2020 - Elsevier
The structural and electrical properties of the SiO 2 layers containing ion-beam synthesized
spherical InSb nanoparticles were studied. The I–V characteristics, low-frequency …

Electrical control of Kondo effect and superconducting transport in a side-gated InAs quantum dot Josephson junction

Y Kanai, RS Deacon, A Oiwa, K Yoshida, K Shibata… - Physical Review B …, 2010 - APS
We measure the nondissipative supercurrent in a single InAs self-assembled quantum dot
(QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate …

Spin-related current suppression in a semiconductor quantum dot spin-diode structure

K Hamaya, M Kitabatake, K Shibata, M Jung, S Ishida… - Physical review …, 2009 - APS
We experimentally study the transport features of electrons in a spin-diode structure
consisting of a single semiconductor quantum dot (QD) weakly coupled to one nonmagnetic …