Numerical methods for a Poisson-Nernst-Planck-Fermi model of biological ion channels
JL Liu, B Eisenberg - Physical Review E, 2015 - APS
Numerical methods are proposed for an advanced Poisson-Nernst-Planck-Fermi (PNPF)
model for studying ion transport through biological ion channels. PNPF contains many more …
model for studying ion transport through biological ion channels. PNPF contains many more …
A 14nm FinFET transistor-level 3D partitioning design to enable high-performance and low-cost monolithic 3D IC
J Shi, D Nayak, S Banna, R Fox… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
Monolithic 3D IC (M3D) shows degradation in performance compared to 2D IC due to the
restricted thermal budget during fabrication of sequential device layers. A transistor-level …
restricted thermal budget during fabrication of sequential device layers. A transistor-level …
Transient analysis for electrothermal properties in nanoscale transistors
A Cheng, S Chen, H Zeng, D Ding… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Due to the significance of electron and heat transfer in designing the nanoscale
semiconductor devices, the transient analysis of electrothermal properties has attracted …
semiconductor devices, the transient analysis of electrothermal properties has attracted …
Design and simulation of vertically-stacked nanowire transistors at 3 nm technology nodes
Abstract Gate-all-around (GAA) cylindrical Si channel nanowire field-effect transistor (NW-
FET) devices have the potential to replace FinFETs in future technology nodes because of …
FET) devices have the potential to replace FinFETs in future technology nodes because of …
An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
We present an entropic quantum drift-diffusion model (eQDD) and show how it can be
derived on a bounded domain as the diffusive approximation of the Quantum Liouville …
derived on a bounded domain as the diffusive approximation of the Quantum Liouville …
On quantum hydrodynamic and quantum energy transport models
In this paper, we consider two recently derived models: the Quantum Hydrodynamic model
(QHD) and the Quantum Energy Transport model (QET). We propose different equivalent …
(QHD) and the Quantum Energy Transport model (QET). We propose different equivalent …
Performance and opportunities of gate-all-around vertically-stacked nanowire transistors at 3nm technology nodes
Gate-all-around (GAA) cylindrical channel Si nanowire field effect transistor (NW-FET)
devices have the potential to replace FinFETs in future technology nodes because of their …
devices have the potential to replace FinFETs in future technology nodes because of their …
Energy transport in semiconductor devices
A Jüngel - Mathematical and Computer Modelling of Dynamical …, 2010 - Taylor & Francis
The modelling, analysis and numerical approximation of energy-transport models for
semiconductor devices are reviewed. The derivation of the partial differential equations from …
semiconductor devices are reviewed. The derivation of the partial differential equations from …
An accelerated monotone iterative method for the quantum-corrected energy transport model
RC Chen, JL Liu - Journal of Computational Physics, 2008 - Elsevier
A non-stationary monotone iterative method is proposed and analyzed for the quantum-
corrected energy transport model in nanoscale semiconductor device simulation. For the …
corrected energy transport model in nanoscale semiconductor device simulation. For the …
Quantum hydrodynamic and diffusion models derived from the entropy principle
In these notes, we review the recent theory of quantum hydrodynamic and diffusion models
derived from the entropy minimization principle. These models are obtained by taking the …
derived from the entropy minimization principle. These models are obtained by taking the …