A comprehensive review on microwave FinFET modeling for progressing beyond the state of art
FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …
attention to progress further into the nanometer era by going beyond the downscaling limit of …
Physics-based multi-bias RF large-signal GaN HEMT modeling and parameter extraction flow
In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high
electron mobility transistors is demonstrated that is constructed around a surface-potential …
electron mobility transistors is demonstrated that is constructed around a surface-potential …
Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson… - Nano Letters, 2010 - ACS Publications
In this letter we report on high-frequency measurements on vertically standing III− V
nanowire wrap-gate MOSFETs (metal− oxide− semiconductor field-effect transistors). The …
nanowire wrap-gate MOSFETs (metal− oxide− semiconductor field-effect transistors). The …
Analytical drain thermal noise current model valid for deep submicron MOSFETs
In this paper, a physics-based MOSFET drain thermal noise current model valid for deep
submicron channel lengths was derived and verified with experiments. It is found that the …
submicron channel lengths was derived and verified with experiments. It is found that the …
A High-Frequency Transconductance Method for Characterization of High- Border Traps in III-V MOSFETs
S Johansson, M Berg, KM Persson… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-
semiconductor field-effect transistors (MOSFETs) is presented. The increase in …
semiconductor field-effect transistors (MOSFETs) is presented. The increase in …
Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs
CB Zota, G Roll, LE Wernersson… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires
constituting the channel in these devices have been formed using selective area regrowth …
constituting the channel in these devices have been formed using selective area regrowth …
Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS
R Torres-Torres, R Murphy-Arteaga… - … on Electron Devices, 2005 - ieeexplore.ieee.org
A model which considers the pad parasitic effects when performing on-wafer S-parameter
measurements on microwave devices fabricated on silicon substrates is presented. The …
measurements on microwave devices fabricated on silicon substrates is presented. The …
Artificial neural network-based modeling for estimating the effects of various random fluctuations on dc/analog/rf characteristics of gaa si nanosheet fets
Advanced field-effect transistors (FETs), such as gate-all-around (GAA) nanowire (NW) and
nanosheet (NS) devices, have been highly scaled; therefore, they are critically affected even …
nanosheet (NS) devices, have been highly scaled; therefore, they are critically affected even …
Transistor compact model based on multigradient neural network and its application in SPICE circuit simulations for gate-all-around Si cold source FETs
Q Yang, G Qi, W Gan, Z Wu, H Yin… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Transistor compact model (TCM) is the key bridge between process technology and circuit
design. Typically, TCM is desired to capture the nonlinear device electronic characteristics …
design. Typically, TCM is desired to capture the nonlinear device electronic characteristics …
High-performance lateral nanowire InGaAs MOSFETs with improved on-current
We report on In 0.85 Ga 0.15 As MOSFETs utilizing selectively grown lateral nanowires as
the channel. These devices exhibit ON-current of ION= 565 μA/μm at IOFF= 100 nA/μm and …
the channel. These devices exhibit ON-current of ION= 565 μA/μm at IOFF= 100 nA/μm and …