FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

In this paper, a consistent DC to RF modeling solution for Al gallium nitride (GaN)/GaN high
electron mobility transistors is demonstrated that is constructed around a surface-potential …

In this letter we report on high-frequency measurements on vertically standing III− V
nanowire wrap-gate MOSFETs (metal− oxide− semiconductor field-effect transistors). The …

In this paper, a physics-based MOSFET drain thermal noise current model valid for deep
submicron channel lengths was derived and verified with experiments. It is found that the …

A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-
semiconductor field-effect transistors (MOSFETs) is presented. The increase in …

We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires
constituting the channel in these devices have been formed using selective area regrowth …

A model which considers the pad parasitic effects when performing on-wafer S-parameter
measurements on microwave devices fabricated on silicon substrates is presented. The …

Advanced field-effect transistors (FETs), such as gate-all-around (GAA) nanowire (NW) and
nanosheet (NS) devices, have been highly scaled; therefore, they are critically affected even …

Transistor compact model (TCM) is the key bridge between process technology and circuit
design. Typically, TCM is desired to capture the nonlinear device electronic characteristics …

We report on In 0.85 Ga 0.15 As MOSFETs utilizing selectively grown lateral nanowires as
the channel. These devices exhibit ON-current of ION= 565 μA/μm at IOFF= 100 nA/μm and …