We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …

Hyperdoped germanium (Ge) has demonstrated increased sub-bandgap absorption,
offering potential applications in the short-wavelength-infrared spectrum (1.0–3.0 μm). This …

With increasing demand for infrared (IR) photonics and optoelectronics, germanium (Ge)
has recently regained attention due to its outstanding optical properties in the near infrared …

In this work, we present the formation of silicon layers hyperdoped with selenium through Se
implantation followed by pulsed laser annealing. The concentration depth distribution of Se …

To reduce the wide bandgap of diamond and expand its applications in the photovoltaic
fields, a diamond-based intermediate-band (IB) material C-Ge-V alloy was designed by first …

We present a detailed investigation on the formation of supersaturated GaAs using Ti+
implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized …

Heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a
focused ion beam (FIB) system and post‐implantation laser annealing is demonstrated. Ion …

Fs-laser irradiation is a promising fabrication method for future broadband optoelectronic
applications as it creates antireflective micro-and nanoscale structures on semiconductor …

Herein, a detailed investigation on the properties of supersaturated gallium arsenide (GaAs)
using Ti+ implantation followed by nanosecond pulsed laser melting (PLM) is presented …

Herein, the structural properties and chemical composition of Ge samples implanted with
tellurium at cryogenic temperatures are analyzed, focusing on the role of the native oxide …