We report an avalanche photodiode with an undepleted p-type InGaAs absorption region
and a thin InAlAs multiplication layer. The motivation for utilizing an undepleted absorption …

We investigated the dark current components of thin planar InGaAs photodiodes grown by
metalorganic vapor-phase epitaxy for optical nano-resonators. Owing to their high electric …

This paper presents a novel front-illuminated InAlAs/InGaAs separate absorption, grading,
field-control and multiplication (SAGFM) avalanche photodiodes (APDs) with a mesa …

Avalanche photodiodes (APDs) are key optical receivers due to their performance
advantages of high speed, high sensitivity, and low noise. The most critical device …

Unipolar barrier detector design is a challenge for InGaAs material system since there is a
lack of proper barrier material that blocks majority carriers and allows unimpeded flow of …

Inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs
photodetectors provides a lower dark current than the conventional mesa type structures …

An avalanche photodiode (APD) using a InAlAs multiplication region and a type-II
InGaAs/GaAsSb superlattice as the absorber (both lattice matched to InP) is reported. An …

We propose a gate-controlled device structure for mesa-type infrared photon detectors with
the means of improving surface conditions. Additional terminal added to the pn-junction …

The dark current of a photodetector is a key parameter for high-sensitivity optical receivers.
We report low-dark-current, triple-mesa avalanche photodiodes that have~ 50 times lower …

We designed a pn InGaAs/InP heterojunction photodiode with a novel passivation approach
that employs a thin and fully depleted in-device (embedded in the pn structure) p-InP layer …