This review describes recent progress in the understanding of the emergence of scale
invariance in far-from-equilibrium growth. The first section is devoted to 'solvable'needle …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …

Growth of thin films from atoms deposited from the gas phase is intrinsically a
nonequilibrium phenomenon governed by a competition between kinetics and …

GaAs (0 0 1) has been one of the most intensively studied surfaces for the past 30 years due
both to its importance as a substrate for epitaxial growth and to the challenge its phase …

A model of submonolayer thin film growth is studied, where the attachment of atoms to island
edges is hindered by an energy barrier. A novel behavior of the density of islands, N s, is …

The effects of a bismuth surfactant layer on the molecular beam epitaxy of GaAs and In x Ga
1− x As layers on GaAs (001) were studied. The In x Ga 1− x As surface reconstruction …

Progress in the fields of electronic and optical devices relies on the ability of the
semiconductor industry to fabricate components of ever-increasing complexity and …

During the last decade, Si/Si 1− x Ge x heterostructures have emerged as a viable system
for use in CMOS technology with the recent industrial production of heterojunction bipolar …

The effects of a surfactant on two-dimensional pattern formation in epitaxial growth are
explored theoretically using a simple model, in which an adatom becomes immobile only …

We have investigated the use of In as a surfactant to achieve smoother interfaces in spin‐
valve multilayers of the general type: FeMn/Ni80Fe20/Co/Cu/Co/Ni80Fe20/glass. The …