Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …

Abstract Two-dimensional (2D) graphene has unique electrical properties such as high
mobility and ballistic transport at room temperature. Two-dimensional hexagonal boron …

Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths
because of severe short channel effects. As an alternative to Si, certain layered …

High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate
length of 5 nanometers can be fabricated that perform better than silicon complementary …

Although carbon nanotube (CNT) transistors have been promoted for years as a
replacement for silicon technology, there is limited theoretical work and no experimental …

Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and
are ideal materials for applications in electronic devices. Significant progress has been …

The novel electronic properties of graphene,,,, including a linear energy dispersion relation
and purely two-dimensional structure, have led to intense research into possible …

The semiconductor industry has been able to improve the performance of electronic systems
for more than four decades by making ever-smaller devices. However, this approach will …

Since their discovery, carbon nanotubes have attracted the attention of many a scientist
around the world. This extraordinary interest stems from their outstanding structural …

Sub-10 nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied
systematically. All sub-10 nm GNRs afforded semiconducting FETs without exception, with I …