Characterization and global parameter extraction of bulk MOSFETs using BSIM-bulk model
Measurement and scalable modelcard development methodology for 180 nm Bulk MOSFET
technology using BSIM-BULK compact model is presented in this paper. On-wafer device …
technology using BSIM-BULK compact model is presented in this paper. On-wafer device …
Compact Modeling of Drain-Extended MOS Transistor Using BSIM-BULK Model
SS Parihar, R Gurjar - VLSI Design and Test: 23rd International …, 2019 - Springer
The charge based compact model for Drain-Extended MOS (DEMOS) transistor is presented
in this work. Proposed model accurately predicts the special effects of quasi-saturation …
in this work. Proposed model accurately predicts the special effects of quasi-saturation …