Electrical isolation of the billion or so active components in each integrated device is
achieved using shallow trench isolation (STI) which requires chemical mechanical …

Cerium oxide is the main abrasive used in the chemical mechanical polishing (CMP)
process of shallow trench isolation (STI) in integrated circuit manufacturing. It is widely …

The continuous reduction in feature size of integrated circuits has raised stricter material
removal selectivity and surface quality requirements for the chemical mechanical polishing …

The contamination behavior of ceria particles (50 and 100 nm) with oxide surfaces at pH 4
and 8 was studied using dipping and polishing conditions. Higher contamination at pH 4 …

The interactions between abrasive particles and the wafer surface play a significant role in
the chemical-mechanical planarization (CMP) process. The influence of interactions …

Amino acids, when used with ceria based slurries, yield high selectivity in shallow trench
isolation chemical mechanical polishing (CMP). However, the presence of impurities in the …

Picolinic acid, nicotinic acid, proline, and γ-amino butyric acid were investigated as additives
in ceria dispersions for polishing of SiO2 and Si3N4 films. Removal rates (RRs) data …

Ceria based slurries with additives are widely used in shallow trench isolation (STI)
chemical mechanical planarization (CMP) process to obtain high selective removal of silicon …

Chemical mechanical polishing (CMP) is a committed step in the manufacturing of
integrated circuits, especially in the fabrication process of shallow trench isolation (STI) …

The role of abrasives and additives in ceria-based dispersions on the removal rate of silicon
nitride film during chemical mechanical polishing is discussed. Our results suggest that ceria …