Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga… - Journal of Physics D …, 2018 - iopscience.iop.org
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
facilitate economic growth in a semiconductor industry that is silicon-based and currently …
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
M Meneghini, I Rossetto, D Bisi… - IEEE Electron …, 2016 - ieeexplore.ieee.org
This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si
metal-insulator–semiconductor high electron mobility transistors with partially recessed …
metal-insulator–semiconductor high electron mobility transistors with partially recessed …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures
We report on the electrical and microstructural characterization of Au-free Ti/Al/Ti/TiN
contacts for AlGaN/GaN heterostructures. Ultra-low Au-free ohmic contact has been …
contacts for AlGaN/GaN heterostructures. Ultra-low Au-free ohmic contact has been …
Characterization of electronic states at insulator/(Al) GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
This paper presents a systematic characterization of electronic states at insulators/(Al) GaN
interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review …
interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review …
Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates
A Firrincieli, B De Jaeger, S You… - Japanese Journal of …, 2014 - iopscience.iop.org
We report on the fabrication and characterization of Au-free Ti/Al/TiN-based ohmic contacts
on 200 mm AlGaN/GaN epilayers for power devices. Materials and processing used are fully …
on 200 mm AlGaN/GaN epilayers for power devices. Materials and processing used are fully …
Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices
A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …
generation of highly efficient electronics for high-frequency, high-power and high …