A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Memory effects in complex materials and nanoscale systems
YV Pershin, M Di Ventra - Advances in Physics, 2011 - Taylor & Francis
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …
the dynamical properties of electrons and ions strongly depend on the history of the system …
Advances in resistive switching based memory devices
Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …
Spectromicroscopic insights for rational design of redox-based memristive devices
The demand for highly scalable, low-power devices for data storage and logic operations is
strongly stimulating research into resistive switching as a novel concept for future non …
strongly stimulating research into resistive switching as a novel concept for future non …
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes
C Baeumer, C Schmitz, A Marchewka… - Nature …, 2016 - nature.com
The continuing revolutionary success of mobile computing and smart devices calls for the
development of novel, cost-and energy-efficient memories. Resistive switching is attractive …
development of novel, cost-and energy-efficient memories. Resistive switching is attractive …
Multilevel Resistive Switching in Planar Graphene/SiO2 Nanogap Structures
We report a planar graphene/SiO2 nanogap structure for multilevel resistive switching.
Nanosized gaps created on a SiO2 substrate by electrical breakdown of nanographene …
Nanosized gaps created on a SiO2 substrate by electrical breakdown of nanographene …
Super-fast response humidity sensor based on La0. 7Sr0. 3MnO3 nanocrystals prepared by PVP-assisted sol-gel method
Z Duan, M Xu, T Li, Y Zhang, H Zou - Sensors and Actuators B: Chemical, 2018 - Elsevier
Abstract La 0.7 Sr 0.3 MnO 3 (LSMO) nanocrystals were prepared by polyvinylpyrrolidone
(PVP)-assisted sol-gel method and characterized by a variety of characterization techniques …
(PVP)-assisted sol-gel method and characterized by a variety of characterization techniques …
[HTML][HTML] Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
Multilevel programing and charge transport characteristics of intrinsic SiO x-based resistive
switching memory are investigated using TaN/SiO x/n++ Si (MIS) and TiW/SiO x/TiW (MIM) …
switching memory are investigated using TaN/SiO x/n++ Si (MIS) and TiW/SiO x/TiW (MIM) …
Resistive switching in single epitaxial ZnO nanoislands
Resistive memory is one of the most promising candidates for next-generation nonvolatile
memory technology due to its variety of advantages, such as simple structure and low-power …
memory technology due to its variety of advantages, such as simple structure and low-power …