The authors investigated the inductively coupled plasma reactive-ion etching (ICP-RIE) of β-
Ga 2 O 3 using different fluorine and chlorine-based plasmas. Sn-doped (-201) oriented β …

Selective etching of LaAlSiO x to Si has been studied in inductively coupled BCl 3 plasma
using a hot cathode, and in capacitively coupled C 4 F 8/Ar and C 4 F 8/Ar/H 2 plasmas. In …

This paper presents a case study of diagnosing alkali silica reaction (ASR) and delayed
ettringite formation (DEF) in mass concrete structures in order to identify causes of cracks in …

Al 2 O 3 thin-film deposited by atomic layer deposition is an attractive plasma etch mask for
Micro and Nano Electro-Mechanical Systems (MEMS and NEMS). 20-nm-thick Al 2 O 3 …

An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive
regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is …

Highly selective and precisely controlled aluminum etching was investigated by using
plasma with a new Ar/HBr/CH 3 F/O 2 gas chemistry. Generally, an aluminum surface is …

A deep inductively coupled plasma etching process was developed as a part of a
continuous effort to develop an all-silica on-chip platform for high-power optical devices …

The fabrication of nanostructures having diameters of sub-5 nm is very a important issue for
bottom-up nanofabrication of nanoscale devices. In this work, we report a highly controllable …

Introducing nucleic acids into mammalian cells is a crucial step to elucidate biochemical
pathways, modify gene expression in immortalized cells, primary cells, and stem cells, and …

Vertical arrays of nanowires and nanotubes have recently been used in an increasing
number of applications. These applications almost invariably rely on the physical features of …