Emerging nanostructured infrared absorbers enabling cost-effective image sensing: a review
Image sensing has entered a new era with advancements in quantum mechanics. The
infrared (IR) absorbers are the heart of this new era of image sensing. Within the IR spectra …
infrared (IR) absorbers are the heart of this new era of image sensing. Within the IR spectra …
Controlled growth of gallium nitride nanowires on silicon and their utility in high performance Ultraviolet‑A photodetectors
S Sankaranarayanan, P Kandasamy, R Raju… - Sensors and Actuators A …, 2021 - Elsevier
Device fabrication using semiconductor nanostructures for detecting ultraviolet (UV)
radiations, especially UV-A (320–400 nm) has received much attention both at laboratory …
radiations, especially UV-A (320–400 nm) has received much attention both at laboratory …
Effects of indium flow rate on the structural, morphological, optical and electrical properties of InGaN layers grown by metal organic chemical vapour deposition
K Prabakaran, R Ramesh, P Arivazhagan… - Journal of Alloys and …, 2019 - Elsevier
InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …
Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate
This work demonstrated the highly efficient near-ultraviolet (UV) light-emitting diodes (LEDs)
grown on sapphire substrates with InGaN/GaN/Al x Ga 1-x N/GaN multiple-quantum wells …
grown on sapphire substrates with InGaN/GaN/Al x Ga 1-x N/GaN multiple-quantum wells …
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells
Y Hou, F Liang, D Zhao, P Chen, J Yang… - Journal of Alloys and …, 2021 - Elsevier
The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs)
structures grown by metal-organic chemical vapor deposition (MOCVD) with varying …
structures grown by metal-organic chemical vapor deposition (MOCVD) with varying …
Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation
Q Feng, L Liu, Y Zhang, X Zhu, H Kuang, M Zhou… - ACS …, 2024 - ACS Publications
In the InGaN multiple quantum wells (MQWs), V-shaped pits play a crucial role in carrier
transport, which directly affects emitting efficiency. First-principles calculations are applied to …
transport, which directly affects emitting efficiency. First-principles calculations are applied to …
Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition
K Prabakaran, R Ramesh, P Arivazhagan… - Materials Science in …, 2022 - Elsevier
InGaN layers were grown by metal organic chemical vapour deposition (MOCVD) technique
on GaN/sapphire substrates by varying the growth time. The formation of spiral-like growth …
on GaN/sapphire substrates by varying the growth time. The formation of spiral-like growth …
Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells
H Shan, Y Song, X Li, C Li, M Li… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this paper, the mechanism of short-circuit current density (J SC) enhancement in
InGaN/GaN superlattices (SLs)-structured solar cells (SCs) is investigated theoretically and …
InGaN/GaN superlattices (SLs)-structured solar cells (SCs) is investigated theoretically and …
The investigation of photoluminescence properties in InxGa1-xN/GaN multiple quantum wells structures with varying well number
The photoluminescence (PL) properties of InGaN/GaN multiple quantum wells (MQWs)
samples with a different quantum well number (two, three, and four) grown by molecular …
samples with a different quantum well number (two, three, and four) grown by molecular …
Performance enhancement of InGaN based near ultraviolet LEDs with asymmetric staggered quantum wells
C Xu, L Cai, Z Chen, H Lin, K Niu, ZJ Cheng… - Optical and Quantum …, 2024 - Springer
Abstract Like GaN-based LEDs, the further improvement of InGaN based near UV LED
performance also faces a typical problem: the spatial separation of carrier wave functions …
performance also faces a typical problem: the spatial separation of carrier wave functions …