We investigate the morphological, electrical, magnetic, and resistive switching properties of
(Co, Yb) co-ZnO for neuromorphic computing. By using hydrothermal synthesized …

The complex ionic-electronic conduction in mixed halide perovskites enables their use
beyond von Neumann architectures implemented in resistive switching memory devices …

The memristor is regarded as one of the promising possibilities for next-generation
computing systems due to its small size, easy construction, and low power consumption …

In this study, we demonstrated a TiO 2-based 32× 32 crossbar array resistive RAM
(ReRAM), a promising candidate for next-generation non-volatile memory (NVM), by utilizing …

Inspired by the structure and principles of the human brain, spike neural networks (SNNs)
appear as the latest generation of artificial neural networks, attracting significant and …

Hybrid halide perovskites are attractive candidates for resistive switching memories in
neuromorphic computing applications due to their mixed ionic-electronic conductivity …

Memristors have emerged as promising elements for brain-inspired computing applications,
yet the understanding of their switching mechanisms, particularly in valence change …

This study presents an ITO/ZnO/ITO/Si memristor fabricated via reactive sputtering for use in
advanced analog synaptic plasticity and reservoir computing (RC) systems. The proposed …

Background Depression is a global mental disorder, and traditional diagnostic methods
mainly rely on scales and subjective evaluations by doctors, which cannot effectively identify …

Many correlated oxides feature an insulator-to-metal transition as the temperature is
increased. In thin films, this transition can be electrically induced by localized Joule heating …