In this paper, the basic concepts of the equivalent model, vibration modes, and conduction
mechanisms of MEMS resonators are described. By reviewing the existing representative …

Elastic constants c 11, c 12, and c 44 of degenerately doped silicon are studied
experimentally as a function of the doping level and temperature. First-and second-order …

Analytical and numerical modeling techniques are presented to predict n-type-doped silicon
resonators' temperature coefficient frequencies for the extensional mode of vibration by …

The first-and second-order temperature coefficients and the total temperature-induced
frequency deviation of degenerately n-type-doped silicon resonators are modeled. Modeling …

The elastic properties of structural materials considerably influence the resonant frequency
of silicon MEMS resonators and their sensitivity to temperature variations. This work studies …

This paper presents an oven controlled N++[1 0 0] length-extensional mode silicon
resonator, with a lookup-table based control algorithm. The temperature coefficient of …

A model for predicting n-type doped silicon elastic constants is presented in this paper. The
model approach is based on an empirical exponential expression derived for the uniaxial …

A vibration device that includes a support member, vibration arms connected to the support
member and each having an n-type Si layer which is a degenerate semiconductor, and …

This paper reports the effects of crystal orientations on the temperature coefficient of
frequency (TCf) of single crystal silicon square-plate micromechanical resonators vibrating …

This paper presents a capacitive bulk mode resonator operating in Lamé mode, where the
motional resistance and temperature stability are enhanced by implementing a set of …