The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …

We have investigated the band structure of tensile-strained germanium using a 30 band k⋅
p formalism. This multiband formalism allows to simultaneously describe the valence and …

In this letter, we propose a heterostructure design for tunnel field effect transistors with two
low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in …

It has been demonstrated theoretically and experimentally that germanium, with proper
strain engineering and n-type doping, can be an efficient light emitter and a gain medium at …

Highly tensile-strained layers of Ge were grown via molecular beam epitaxy using step-
graded In x Ga 1− x As buffer layers on (100) GaAs. These layers have biaxial tensile-strain …

This work presents a novel method to introduce a sustainable biaxial tensile strain larger
than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman …

We show that the recombination energy of the direct band gap photoluminescence (PL) of
germanium can be controlled by an external mechanical stress. The stress is provided by an …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

We show that a strong tensile strain can be applied to germanium microdisks using silicon
nitride stressors. The transferred strain allows one to control the direct band gap emission …