The cryogenic indium phosphide (InP) high-electron-mobility transistor (HEMT) low-noise
amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling …

Quantum computers now encounter the significant challenge of scalability, similar to the
issue that classical computing faced previously. Recent results in high-fidelity spin qubits …

This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for
cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier …

Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) are regarded as
fundamental semiconductor devices for future power electronic applications. Consequently …

A cryogenic filtering low-noise amplifier (LNA) using 100-nm InP technology is presented in
this letter. Fusion design method is utilized to incorporate filtering functionality seamlessly …

Large-scale superconducting quantum computers require massive numbers of high-
performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a …

This study introduces a High Electron Mobility Transistor (HEMT) designed for millimeter-
wave applications, utilizing a composite channel structure based on InP and InGaAs-InAs …

This work, for the first time, delves into and elucidates the underlying mechanism of
subthreshold swing (SS) saturation in cryogenic InGaAs high electron mobility transistors …

The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise
amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The …

A cryogenic 4-8 GHz hybrid-MMIC LNA, enhanced with an external high-temperature
superconductor (HTS) impedance matching network (IMN), is proposed. It evolves from a …