Thin‐film ferroelectrics
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …
[HTML][HTML] Thermally sprayed functional coatings and multilayers: a selection of historical applications and potential pathways for future innovation
EJ Gildersleeve, R Vaßen - Journal of thermal spray technology, 2023 - Springer
Thermal spray coatings are material systems with unique structures and properties that have
enabled the growth and evolution of key modern technologies (ie, gas turbines, structurally …
enabled the growth and evolution of key modern technologies (ie, gas turbines, structurally …
[图书][B] Semiconducting Silicides: Basics, Formation, Properties
VE Borisenko - 2013 - books.google.com
Semiconductors are well known as the main materials of modem solid-state electronics.
They have held the attention of researches and engineers since the brilliant invention of the …
They have held the attention of researches and engineers since the brilliant invention of the …
Cohesive, structural, and electronic properties of Fe-Si compounds
EG Moroni, W Wolf, J Hafner, R Podloucky - Physical Review B, 1999 - APS
Phase stability, structural, and electronic properties of iron silicides in the Fe 3 Si, FeSi, and
FeSi 2 compositions are investigated by first-principle density-functional calculations based …
FeSi 2 compositions are investigated by first-principle density-functional calculations based …
Transition metal silicides in silicon technology
AH Reader, AH Van Ommen, PJW Weijs… - Reports on Progress …, 1993 - iopscience.iop.org
Studies of the properties and characteristics of transition metal silicides have been
stimulated by their (potential) use in integrated circuit technology. This review describes …
stimulated by their (potential) use in integrated circuit technology. This review describes …
Ion beam synthesis of epitaxial silicides: fabrication, characterization and applications
S Mantl - Materials Science Reports, 1992 - Elsevier
The technique of synthesizing buried epitaxial silicides by high-dose ion implantation and
subsequent high-temperature annealing is reviewed. This technique, called mesotaxy, is at …
subsequent high-temperature annealing is reviewed. This technique, called mesotaxy, is at …
[PDF][PDF] Epitaxial films of semiconducting FeSi2 on (001) silicon
M Nathan, MA Nicolet, G Bai, Y Xinghua, RG Long… - 1990 - mountainscholar.org
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on
(001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si (001), with …
(001) silicon wafers. The observed matching face relationship is FeSi2 (100)/Si (001), with …
Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials
Predominant dislocation types in solar silicon are dissociated into 30°-and 90°-partials with
reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D …
reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D …
Nature of the band gap of polycrystalline β- films
C Giannini, S Lagomarsino, F Scarinci, P Castrucci - Physical Review B, 1992 - APS
We present experimental evidence for the indirect nature of the β-FeSi 2 gap. We
furthermore show, by analyzing the temperature dependence of the direct gap by means of a …
furthermore show, by analyzing the temperature dependence of the direct gap by means of a …
Occurrence of rotation domains in heteroepitaxy
M Grundmann, T Böntgen, M Lorenz - Physical review letters, 2010 - APS
Heteroepitaxy can involve materials with a misfit of crystal structure. Rotation domains in the
epilayer are a fundamental consequence. We derive a general expression for their …
epilayer are a fundamental consequence. We derive a general expression for their …