Plasmonic ferroelectric modulator monolithically integrated on SiN for 216 GBd data transmission
A high-speed plasmonic barium titanate (BTO, BaTiO_3) Mach-Zehnder modulator is
presented. We combine nanoscale plasmonics with BTO as solid-state active material and …
presented. We combine nanoscale plasmonics with BTO as solid-state active material and …
RF-sputtered Z-cut electro-optic barium titanate modulator on silicon photonic platform
AB Posadas, VE Stenger, JD DeFouw… - Journal of Applied …, 2023 - pubs.aip.org
ABSTRACT Epitaxial BaTiO3 integrated on Si or Si-on-insulator using off-axis radio
frequency sputtering is a promising material platform for building electro-optic modulators …
frequency sputtering is a promising material platform for building electro-optic modulators …
Electro-optic frequency response of thin-film barium titanate (BTO) from 20 to 270 GHz
ECOC 2022 Paper Template Page 1 Electro-Optic Frequency Response of Thin-Film Barium
Titanate (BTO) from 20 to 270 GHz Daniel Chelladurai(1), Manuel Kohli(1), Yannik Horst(1) …
Titanate (BTO) from 20 to 270 GHz Daniel Chelladurai(1), Manuel Kohli(1), Yannik Horst(1) …
216 GBd plasmonic ferroelectric modulator monolithically integrated on silicon nitride
We demonstrate a 216 GBd plasmonic ferroelectric modulator monolithically integrated with
a foundry-produced silicon nitride platform. The combination of low-loss waveguiding …
a foundry-produced silicon nitride platform. The combination of low-loss waveguiding …
Plasmonic transceivers for the Terabaud age
D Moor, J Leuthold, Y Fedoryshyn… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
This work summarizes the recent progress towards a Terabaud electronic-plasmonic circuit
integration platform. The conventional (2D), flip-chip and monolithic electronic-photonic …
integration platform. The conventional (2D), flip-chip and monolithic electronic-photonic …
The silicon-based XOI wafer: The most general electronics-photonics platform for computing, sensing, and communications
This paper proposes that the 300-mm-diameter silicon wafer coated with a thin insulator
layer, which becomes a buried layer, is the most general and most capable platform for high …
layer, which becomes a buried layer, is the most general and most capable platform for high …
Efficient multi-step coupling between Si3N4 waveguides and CMOS plasmonic ferroelectric phase shifters in the O-band
D Chatzitheocharis, D Ketzaki, G Patsamanis… - Optics …, 2022 - opg.optica.org
In this paper we present a thorough simulation-based analysis for the design of multi-step
couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase …
couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase …