This paper presents two 2-stage inverse class-F power amplifiers (PAs) at 24 GHz and 38
GHz, integrated in 0.13 μm SiGe BiCMOS technology. The PAs are composed of an inverse …

This paper reports the enhancement of the 100 nm GaN high-electron-mobility transistor and
circuit technology by two evolutionary process development steps. Both, the application of a …

We are in the center of the most life-changing technological revolution the Earth has ever
known. In little more than 65 years, an eye-blink in human history, a single technological …

A W-band power amplifier with Class-E tuning in a 0.13 μm SiGe BiCMOS technology is
presented. Voltage swing beyond BV CBO is enabled by the cascode topology, low upper …

This paper presents a power-efficient phased-array transmit and receive (T/R) channels
adopting phase shifters (PSs) utilizing quadrature-hybrid-based power-domain phase …

The technology, design aspects and performance of a family of three compact W-band
power amplifier MMICs are presented. The circuits are fabricated in a commercially …

In this paper, a compact W-band four-stage power amplifier MMIC in a commercially
available 0. l-μm GaAs PHEMT process is presented. By utilizing balanced structure with on …

This paper proposes a low-voltage cascode (CC) power amplifier (PA) for IEEE 802.11 aj
(45 GHz) application. A capacitor coupling technology is employed to adapt the CC PA to …

We present the analysis and design of high-power millimetre-wave power amplifier (PA)
systems using zero-degree combiners (ZDCs). The methodology presented optimises the …

This paper presents for the first time a class-F-like W-band power amplifier in InP DHBT
technology. It reaches a power added efficiency (PAE) of 25.4% at 8.8 dBm output power …