In this article, we give an overview about the chemical and physical processes that play a
role in etching at lower wafer temperatures. Conventionally, plasma etching processes rely …

Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

A surface model is presented for the etching of silicon (Si) and silicon dioxide (SiO 2) in
fluorocarbon plasmas. Etching and deposition are accounted for using a generalized …

A parametric study of the etching of polymers has been performed in a 2.45‐GHz microwave
multipolar plasma using an electron‐cyclotron‐resonance excitation and an independent …

A combined plasma physics and chemistry simulator is presented and applied for rf methane
discharge in the 100 mTorr pressure range. The simulator consists of a self-consistent fluid …

Process modeling is widely used in the design of both integrated circuits themselves and in
the design of integrated circuit manufacturing processes. Director1 gives an overview of the …

A self‐consistent, one‐dimensional simulator for the physics and chemistry of radio
frequency plasmas is developed and applied for CF4. The simulator consists of a fluid model …

In this article the major kinetics models for plasma-surface interactions were reviewed
highlighting their strengths and limitations. As a subset of reactive-site modeling, mixing …

The dependences of silicon etching rate on the concentration of F atoms are investigated
theoretically. The nonlinear regression analysis of the experimental data indicates that the …

The radical was detected in the gas phase during the etching of both Si and substrates
under reactive ion etching conditions in steady state and in the afterglow of pulsed plasmas …