Graphene bridge rectifier based on self-switching diode arrays

J Zhang, J Brownless, A Song - Nanotechnology, 2019 - iopscience.iop.org
Here, we present theory and measurements for a bridge rectifier formed from arrays of
graphene self-switching diodes (GSSDs). Despite graphene's lack of a bandgap and high …

Extraction of trench capacitance and reverse recovery time of InGaAs self-switching diode

S Garg, B Kaushal, S Kumar, SR Kasjoo… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this paper, we have presented the transient analysis of an InGaAs based novel nano
diode called self-switching device utilizing Silvaco TCAD simulator. The device exhibits …

A computational study of rectification behavior of doped α-graphyne nanotubes

E Zaminpayma, S Ghorbanali - Computational Condensed Matter, 2024 - Elsevier
Abstract α-graphyne is a carbon nanosheet with sp and sp 2 hybridization. This sheet is a
hexagonal semi-metal like graphene. In this paper, we roll α-graphyne sheet and build …

Induced rectification behavior in armchair SiC nanoribbon by Al and P doping

E Zaminpayma, H Ghaziasadi, P Nayebi - Computational Condensed …, 2019 - Elsevier
The rectification behavior of the armchair SiC nanoribbons devices with the substitutional
aluminum (Al) and phosphorus (P) impurities are investigated using density functional …

Low-Frequency Noise in Electric Double Layer InGaZnO Thin-Film Transistors Gated with Sputtered SiO2-Based Electrolyte

X Ma, J Zhang, W Cai, J Wilson… - ACS Applied Electronic …, 2019 - ACS Publications
Using electrolyte as the gate dielectric to form an electric double layer (EDL) is an effective
method to reduce the operating voltage of thin-film transistors (TFTs). Such TFTs are …

Electrical properties and rectification mechanism of the graphene step shape junctions

P Nayebi, E Zaminpayma, S Solaymani - Optik, 2018 - Elsevier
The first principles calculations based on self-consistent charge density functional tight-
binding have performed to investigate the electronic properties and rectification behavior of …

Effect of side gates doping on graphene self-switching nano-diode rectification

H Ghaziasadi, S Jamasb, P Nayebi - Materials Research …, 2019 - iopscience.iop.org
Based on the self-consistent charge density functional tight-binding method, the electrical
properties and rectification behavior of graphene self-switching nanodiodes with B and N …

Large rectification ratio induced by nitrogen and boron doping in adjacent armchair graphene nanoribbons

H Ghaziasadi, P Nayebi, S Majidi - Materials Letters, 2020 - Elsevier
The rectification behavior of two and three separated armchair graphene nanoribbons
(AGNRs) which one of them plays the role of channel and others play the role of side gates …

Numerical Simulation and Parameters Variation of Silicon Based Self-Switching Diode (SSD) and the Effect to the Physical and Electrical Properties

YL Tan, NF Zakaria, SR Kasjoo… - … International RF and …, 2020 - ieeexplore.ieee.org
Investigation of SOI based self-switching diode (SSD) by numerical simulation for RF-DC
harvesting application is presented. The rectification performance of the SSD is based on …