This paper proposes a p-type double gate junctionless field effect transistor having opposite
doping in the core with that of the silicon body referring to rectangular core–shell (RCS) …

A rectangular core is inserted in double gate junctionless transistor (DGJLT) which
separates the top shell and bottom shell in the device called as rectangular core–shell …

Topography simulations allow for a visualization of semiconductor surfaces as well as the
interfaces between various material regions after a given processing step. Topography …

Background: Dengue is known as the most severe arboviral infection in the world spread by
Aedes aegypti. However, conventional and laboratory-based enzyme-linked immunosorbent …

In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on
Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator …

This paper presents an analytical analysis of a dual‐metal gate all around junctionless
accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET) possessing a horizontal‐like …

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly
doped (1015 cm− 3) p-type silicon-on-insulator by atomic force microscope nanolithography …

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10 15)
silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy …

The threshold voltage of rectangular p-type triple-gate junctionless transistors (JLTs) is
studied experimentally using the transconductance derivative (dg m/dV g) method, after …

Junctionless metal–oxide‐semiconductor field‐effect transistors (MOSFETs) have emerged
as a promising alternative to conventional MOSFETs, offering simplified fabrication and …