Single event transients in digital CMOS—A review

V Ferlet-Cavrois, LW Massengill… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …

Radiation effects in a post-Moore world

DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction

JD Black, PE Dodd, KM Warren - IEEE Transactions on Nuclear …, 2013 - ieeexplore.ieee.org
Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …

Ionizing Radiation Effectsin Electronics

M Bagatin, S Gerardin - 2016 - api.taylorfrancis.com
There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

Modeling single event transients in advanced devices and ICs

L Artola, M Gaillardin, G Hubert… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
The ability for Single Event Transients (SETs) to induce soft errors in Integrated Circuits (ICs)
was predicted for the first time by Wallmark and Marcus in the early 60's and was confirmed …

Impact of technology scaling on SRAM soft error rates

I Chatterjee, B Narasimham… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
Soft error rates for triple-well and dual-well SRAM circuits over the past few technology
generations have shown an apparently inconsistent behavior. This work compares the …

Soft error reliability in advanced CMOS technologies-trends and challenges

D Tang, CH He, YH Li, H Zang, C Xiong… - Science China …, 2014 - Springer
With the decrease of the device size, soft error induced by various particles becomes a
serious problem for advanced CMOS technologies. In this paper, we review the evolution of …

Layout technique for single-event transient mitigation via pulse quenching

NM Atkinson, AF Witulski, WT Holman… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
Layout Technique for Single-Event Transient Mitigation via Pulse Quenching Page 1 IEEE
TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 58, NO. 3, JUNE 2011 885 Layout Technique …

[PDF][PDF] Technology scaling and soft error reliability

LW Massengill, BL Bhuva… - 2012 IEEE …, 2012 - reliablemicrosystems.com
Technology Scaling and Soft Error Reliability Page 1 Technology Scaling and Soft Error
Reliability Lloyd W. Massengill Professor, Department of Electrical Engineering and Computer …

The effect of layout topology on single-event transient pulse quenching in a 65 nm bulk CMOS process

JR Ahlbin, MJ Gadlage, DR Ball… - … on Nuclear Science, 2010 - ieeexplore.ieee.org
Heavy-ion microbeam and broadbeam data are presented for a 65 nm bulk CMOS process
showing the existence of pulse quenching at normal and angular incidence for designs …