Mid-infrared semiconductor lasers: a review
E Tournie, AN Baranov - Semiconductors and Semimetals, 2012 - Elsevier
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …
of applications of growing importance such as photonic sensors for environment, industry or …
Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm
We present a comparison between two kinds of single-frequency Sb-based semiconductor
VCSELs operating at 2.3 μm in continuous-wave regime at room temperature. These lasers …
VCSELs operating at 2.3 μm in continuous-wave regime at room temperature. These lasers …
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm
G Boehm, M Grau, O Dier, K Windhorn… - Journal of Crystal …, 2007 - Elsevier
Vertical-cavity surface-emitting lasers are attractive light sources particularly for gas-sensing
applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from …
applications. Using the AlGaInAs/InP material system, an emission wavelength ranges from …
Electrically pumped room temperature CW VCSELs with 2.3 µm emission wavelength
M Ortsiefer, G Bohm, M Grau, K Windhorn… - Electronics Letters, 2006 - IET
Continuous wave (CW) operation at room temperature of electrically pumped InGaAlAs/InP
vertical-cavity surface-emitting lasers (VCSELs) at emission wavelengths as high as 2.3 µm …
vertical-cavity surface-emitting lasers (VCSELs) at emission wavelengths as high as 2.3 µm …
Progress of optically pumped GaSb based semiconductor disk laser
S Shu, G Hou, J Feng, L Wang, S Tian… - Opto-Electronic …, 2018 - researching.cn
This paper reviewed the development of optically pumped GaSb based semiconductor disk
lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength …
lasers (SDLs) emission at 2 μm wavelength region from the aspects of wavelength …
2-2.7 μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB
DFB lasers, microcavity and External-cavity VCSELs exhibit narrow single-frequency
operation and wide mode-hop-free tuning range, especially well adapted for gas …
operation and wide mode-hop-free tuning range, especially well adapted for gas …
Single-mode monolithic GaSb vertical-cavity surface-emitting laser
We report on the fabrication and performances of an electrically-pumped GaSb monolithic
VCSEL, ie, a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel …
VCSEL, ie, a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel …
Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 µm
A Bachmann, T Lim, K Kashani-Shirazi, O Dier… - Electronics Letters, 2008 - IET
A novel concept for electrically pumped GaSb-based vertical cavity surface emitting lasers
including a structured buried tunnel junction as current aperture is presented. Continuous …
including a structured buried tunnel junction as current aperture is presented. Continuous …
Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors
O Dier, C Reindl, A Bachmann, C Lauer… - Semiconductor …, 2008 - iopscience.iop.org
Graded interface layers are commonly known to reduce the electrical series resistance of
distributed Bragg-reflectors in vertical-cavity surface-emitting lasers in various material …
distributed Bragg-reflectors in vertical-cavity surface-emitting lasers in various material …
ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications
ZnTe/GaSb distributed Bragg reflectors (DBRs) are proposed and demonstrated for mid-
wave infrared (2–5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb …
wave infrared (2–5 μm) optoelectronic applications. The reflectance spectra of ZnTe/GaSb …