Silicon carbide films are potential candidates for the development of microsystems with
harsh environmental conditions. In this work, the production of high-purity silicon carbide …

The increasing demand for microelectromechanical systems (MEMS) as, for example,
piezoresistive sensors with capabilities of operating at high temperatures, mainly for …

Amorphous silicon–carbon alloy (a-Si x C 1-x) thin films have been deposited by radio
frequency (RF) sputter deposition. These films were obtained, from a composite target …

利用先末端氯硅烷化线形活性阴离子聚丁二烯, 然后水解的方法合成了聚丁二烯/二氧化硅(PB/
SiO 2) 杂化材料, 采用红外光谱, GPC 和TG 分析了PB/SiO 2 杂化材料的结构及性能 …

Silicon carbide (SiC) has numerous outstanding properties that make it an interesting
material for high-temperature/high-voltage semiconductor electronics applications. In recent …

Surface modification techniques using plasmas have historically been completed in a low
pressure environment due to Pd (pressure x gap distance) considerations influencing the …

Amorphous silicon–carbon alloy (a-SixC1− x) thin films have been deposited by radio
frequency (RF) sputter deposition. These films were obtained, from a composite target …

Abstract Silicon carbide (SixC1-x) thin films with various Si/C ratio values have been
deposited by radio frequency (RF) co-sputtering. These films were deposited, at different RF …