As MOSFET device dimensions are shrinking to get optimum device performance, device
structure is being modified. Additional atoms have been doped laterally by ion implantation …

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs
incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear …

This paper presents an analytical surface potential model for pocket implanted sub-100 nm
n-MOSFET. The model is derived by solving the Poisson's equation in the depletion region …

This paper presents an analytical surface potential model for pocket implanted sub-100 nm
n-MOSFET. The model is derived by solving the Poissonpsilas equation in the depletion …

This work describes a design process, simulation, and analysis of a CMOS-based common
source amplifier circuit in the Cadence Virtuoso environment at the 45 nm technology node …

The dimensions of the various types of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) device structures are being shrunk continuously to accommodate more …

This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs
incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear …

In this paper, we explained how to develop a 4-bit comparator circuit at the Complementary
Metal Oxide Semiconductor (CMOS) technology nodes of 90 nm, 65 nm, and 45 nm, draw …

Logic gates are vital components of any digital circuits. Logic gates are implemented using
MOS transistors for various complicated integrated circuits, such as SRAM cell, encoder or …

This paper presents the design and analysis of a 1-bit Arithmetic Logic Unit (ALU) with and
without a full adder circuit. The objective of the study is to compare the outputs of the two …