Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
Drain dielectric pocket engineering: its impact on the electrical performance of a hetero-structure tunnel FET
In this paper, a simulated Si0. 6Ge0. 4/Si hetero-structure double gate tunneling FET with
drain dielectric pocket (DDP-SiGe-TFET) is reported for the first time. The high-k (HfO2) …
drain dielectric pocket (DDP-SiGe-TFET) is reported for the first time. The high-k (HfO2) …
Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
Design and analysis of ferro electric-tunneling junction-VTFET for RF/analog and linear application
S Singh - Silicon, 2022 - Springer
In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …
An improved analytical modeling and simulation of gate stacked linearly graded work function vertical TFET
In this paper, a 2D analytical potential model for n+ SiGe Gate stacked linearly graded work
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
function Vertical TFET (n+ SiGe GS-LGW-VTFET) is developed with incorporating the effect …
Design and simulation-based analysis of triple metal gate with ferroelectric-SiGe heterojunction based vertical TFET for Performance Enhancement
In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
Investigation of N+ SiGe gate stacked V-TFET based on Dopingless charge plasma for gas sensing application
In this paper, a novel n+ SiGe pocket layer gate stacked VTFET doping less charge plasma
is proposed and analyzed using Silvaco TCAD simulation software. The proposed device …
is proposed and analyzed using Silvaco TCAD simulation software. The proposed device …
Design and analysis of triple metal vertical TFET gate stacked with N-Type SiGe delta-doped layer
This work deals with the novel characterization of n+ SiGe δ-doped layer with the
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
Comparative analysis of Change plasma and Junctionless Ferroelectric tunneling junction of VTFET for improved performance
S Singh - Silicon, 2023 - Springer
The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
Analytical modeling and simulation of a triple metal vertical TFET with hetero-junction gate stack
In this paper, a new 2D analytical model for surface potential of a gate stacked triple metal
Vertical TFET with n+ delta doped layer (δ-doped n+ SiGe GS-TMG-VTFET) is presented …
Vertical TFET with n+ delta doped layer (δ-doped n+ SiGe GS-TMG-VTFET) is presented …