Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have
matured dramatically over the last few years, and many hundreds of thousands of devices …

The absorption coefficient for a 0.4-m-thick GaN layer grown on a polished sapphire
substrate was determined from transmission measurements at room temperature. A strong …

Iron doped GaN layers were grown by metalorganic chemical vapor deposition (MOCVD)
using ferrocene as the Fe precursor. Specular films with concentrations up to 1.7× 10 19 …

Solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated
on laterally epitaxially overgrown GaN grown by metalorganic chemical vapor deposition …

Epitaxial lateral mask overgrowth which occurs during GaN selective epitaxy has been
studied using linear mask features. The lateral growth varies between its maximum and …

A combination of atomic force microscopy and scanning capacitance microscopy was used
to investigate the relationship between the surface morphology and the near-surface …

Smooth, high quality N-polar GaN films were realized by metal organic chemical vapor
deposition (MOCVD) through growth on misoriented (0001) sapphire substrates and the …

The development of GaN based devices for microwave power electronics at the University of
California, Santa Barbara (UCSB), is reviewed. From 1995 to 2000, the power performance …

In this work secondary ion mass spectroscopy was used to investigate the incorporation of
oxygen, carbon, and hydrogen impurities in smooth N-face (0001¯) and Ga-face (0001) GaN …

A kinetic model is presented to explain the metal organic vapor phase epitaxy (MOVPE)
growth of GaN. The model is based upon measured desorption rates and assumptions on …