Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
Silicon carbide as a wide bandgap semiconductor is of great research interest for its
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
widespread deployment in a range of electronic and optoelectronic devices, particularly in …
Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at
Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice …
Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice …
Analysis of basal plane dislocation motion induced by P+ Ion implantation using synchrotron X-ray topography
Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC
wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room …
wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room …
Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
A high energy ion implantation system has been recently developed at the Tandem Van de
Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of …
Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of …
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
A novel high energy implantation system has been successfully developed to fabricate 4H-
SiC superjunction devices for medium and high voltage via implantation of dopant atoms …
SiC superjunction devices for medium and high voltage via implantation of dopant atoms …