Spin-charge interconversion in heterostructures based on group-IV semiconductors

F Bottegoni, C Zucchetti, G Isella, M Bollani… - La Rivista del Nuovo …, 2020 - Springer
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Dirac-surface-state-dominated spin to charge current conversion in the topological insulator ( films at room temperature

JBS Mendes, O Alves Santos, J Holanda, RP Loreto… - Physical Review B, 2017 - APS
We report the spin-to-charge current conversion in an intrinsic topological insulator (TI)(B i
0.22 S b 0.78) 2 T e 3 film at room temperature. The spin currents are generated in a thin …

Efficient spin to charge current conversion in the 2D semiconductor MoS2 by spin pumping from yttrium iron garnet

JBS Mendes, A Aparecido-Ferreira, J Holanda… - Applied Physics …, 2018 - pubs.aip.org
We report efficient spin to charge current conversion in the 2D transition metal
dichalcogenide semiconductor MoS 2 at room temperature. The spin current is generated by …

Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures

JBS Mendes, O Alves Santos, T Chagas… - Physical Review B, 2019 - APS
This article shows that the spin-to-charge current conversion in single-layer graphene (SLG)
by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the …

Effect of Strain on Room-Temperature Spin Transport in

T Naito, M Yamada, Y Wagatsuma, K Sawano… - Physical Review …, 2022 - APS
We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction
bands at room temperature. Using four-terminal nonlocal spin-transport measurements in …

Spin-coherent dynamics and carrier lifetime in strained semiconductors on silicon

S De Cesari, A Balocchi, E Vitiello, P Jahandar, E Grilli… - Physical Review B, 2019 - APS
We demonstrate an effective epitaxial route for the manipulation and further enrichment of
the intriguing spin-dependent phenomena boasted by germanium. We show optical …

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

J Frigerio, A Ballabio, K Gallacher… - Journal of Physics D …, 2017 - iopscience.iop.org
High n-type doping in germanium is essential for many electronic and optoelectronic
applications especially for high performance Ohmic contacts, lasing and mid-infrared …

Imaging spin diffusion in germanium at room temperature

C Zucchetti, F Bottegoni, C Vergnaud, F Ciccacci… - Physical Review B, 2017 - APS
We report on the nonlocal detection of optically oriented spins in lightly n-doped germanium
at room temperature. Localized spin generation is achieved by scanning a circularly …

Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films

C Zucchetti, MT Dau, F Bottegoni, C Vergnaud… - Physical Review B, 2018 - APS
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field
of spintronics as a means to detect spin currents or manipulate the magnetization of …

Non-local electrical spin injection and detection in germanium at room temperature

F Rortais, C Vergnaud, A Marty, L Vila… - Applied Physics …, 2017 - pubs.aip.org
Non-local carrier injection/detection schemes lie at the very foundation of information
manipulation in integrated systems. This paradigm consists in controlling with an external …