[HTML][HTML] Junctionless transistors: State-of-the-art
A Nowbahari, A Roy, L Marchetti - Electronics, 2020 - mdpi.com
Recent advances in semiconductor technology provide us with the resources to explore
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
alternative methods for fabricating transistors with the goal of further reducing their sizes to …
Dielectric modulated junctionless biotube FET (DM-JL-BT-FET) bio-sensor
In this manuscript, an analytical model has been demonstrated for Dielectric Modulated
Junctionless Biotube FET (DM-JL-BT-FET) as a sensor. The Junctionless Biotube FET …
Junctionless Biotube FET (DM-JL-BT-FET) as a sensor. The Junctionless Biotube FET …
A Dual-Material Gate Junctionless Transistor With High- Spacer for Enhanced Analog Performance
RK Baruah, RP Paily - IEEE Transactions on electron devices, 2013 - ieeexplore.ieee.org
In this paper, we present a simulation study of analog circuit performance parameters for a
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
symmetric double-gate junctionless transistor (DGJLT) using dual-material gate along with …
A full-range drain current model for double-gate junctionless transistors
A drain current model available for full-range operation is derived for long-channel double-
gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D …
gate junctionless transistors. Including dopant and mobile carrier charges, a continuous 1-D …
A quasi-two-dimensional threshold voltage model for short-channel junctionless double-gate MOSFETs
TK Chiang - IEEE Transactions on Electron Devices, 2012 - ieeexplore.ieee.org
Based on the bulk conduction mode of the quasi-2-D scaling theory, an analytical threshold
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
voltage model for short-channel junctionless (JL) double-gate MOSFETs is developed for …
Design and deep insights into sub-10 nm spacer engineered junctionless FinFET for nanoscale applications
N Vadthiya - ECS journal of solid state science and technology, 2021 - iopscience.iop.org
In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …
Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
This paper proposes a drain current model for triple-gate n-type junctionless nanowire
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
transistors. The model is based on the solution of the Poisson equation. First, the 2-D …
Threshold voltage in junctionless nanowire transistors
This work presents a physically based analytical model for the threshold voltage in
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
junctionless nanowire transistors (JNTs). The model is based on the solution of the two …
Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs
Z Chen, Y Xiao, M Tang, Y Xiong… - … on Electron Devices, 2012 - ieeexplore.ieee.org
A surface-potential-based model is developed for the symmetric long-channel junctionless
double-gate MOSFET. The relationships between surface potential and gate voltage are …
double-gate MOSFET. The relationships between surface potential and gate voltage are …
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
A Chakraborty, A Sarkar - Journal of Computational Electronics, 2017 - Springer
An analytical model of dielectric-modulated junctionless gate-stack surrounding gate
MOSFET for application as a biosensor is presented. An expression for the channel-center …
MOSFET for application as a biosensor is presented. An expression for the channel-center …