Dynamic random access memories (DRAMs) are currently used as the core memory in
computing systems because of their high speed and density. Their demand should continue …

In the last decade orthorhombic hafnia and zirconia films have attracted tremendous
attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial …

Fluorite-structure ferroelectrics—in particular the orthorhombic phase of HfO 2—are of
paramount interest to academia and industry because they show unprecedented scalability …

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions
in Hf1-xZrxO2 by first principle calculations | Applied Physics Reviews | AIP Publishing Skip …

Ferroelectric memories experienced a revival in the last decade due to the discovery of
ferroelectricity in HfO 2-based nanometer-thick thin films. These films exhibit exceptional …

HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

Since the first report of ferroelectricity in nanoscale HfO2-based thin films in 2011, this silicon-
compatible binary oxide has quickly garnered intense interest in academia and industry, and …

Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for
example, metals used as interconnects and high-K oxides used in dynamic random-access …

Thanks to their excellent compatibility with the complementary metal–oxide-semiconductor
(CMOS) process, antiferroelectric (AFE) HfO2/ZrO2-based thin films have emerged as …

Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant
attention has been devoted to studying hafnia-based ferroelectric material systems due to …