The paper reviews recent work in the area of high-k dielectrics for application as the gate
oxide in advanced MOSFETs. Following a review of relevant dielectric physics, we discuss …

In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …

HfO2 and HfSiO films were prepared on Si substrates by using radio frequency magnetron
sputtering (RFMS). Compositional, structural and electronic properties of the two films were …

High-k dielectric stacks are regarded as a promising information storage media in the
Charge Trapping Non-Volatile Memories, which are the most viable alternative to the …

Effective metal work function, Φm, eff, and oxide charge, Qox, were determined on MOS
capacitors with slanted high-κ dielectric. Φm, eff and Qox were extracted using flat-band …

In this paper conduction mechanisms which could govern the electron transport through
high-k dielectrics are summarized. The influence of various factors–the type of high-k …

In this work, we report on effects of post-deposition annealing on electrical characteristics of
metal–insulator–semiconductor (MIS) structures with HfO2/SiO2 double gate dielectric …

This paper investigates current transport mechanisms in MOCVD grown (HfO2) x (SiO2) 1−
x/SiO2 (0.3⩽ x⩽ 1) gate stacks using the temperature dependence of leakage current. The …

Thin (∼ 4nm) hafnium silicate (HfO2) x (SiO2) 1− x/SiO2 gate stacks (0< x< 1) grown by
metal organic chemical vapour deposition (MOCVD) are investigated in this study. The focus …

High-k stacked dielectric structures were fabricated by a combination of RF magnetron
sputtering and plasma-enhanced chemical vapor deposition. Their structural properties …