Semiconductor nanowires: to grow or not to grow?
PC McIntyre, AF i Morral - Materials Today Nano, 2020 - Elsevier
Semiconductor nanowires have demonstrated exciting properties for nanophotonics,
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
sensors, energy technologies, and end-of-roadmap and beyond-roadmap electronic …
III-Nitride nanowire optoelectronics
Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …
intensively studied in the past decade. Unique to this material system is that its energy …
[图书][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
[HTML][HTML] GaN based nanorods for solid state lighting
S Li, A Waag - Journal of Applied Physics, 2012 - pubs.aip.org
In recent years, GaN nanorods are emerging as a very promising novel route toward devices
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …
for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices …
Vertical 1D/2D heterojunction architectures for self-powered photodetection application: GaN nanorods grown on transition metal dichalcogenides
Y Zheng, B Cao, X Tang, Q Wu, W Wang, G Li - ACS nano, 2022 - ACS Publications
Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal
dichalcogenide (TMD) materials have attracted the attention of researchers to conduct …
dichalcogenide (TMD) materials have attracted the attention of researchers to conduct …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Room temperature ultralow threshold GaN nanowire polariton laser
We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled
to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude …
to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude …
Recent advances in InGaN nanowires for hydrogen production using photoelectrochemical water splitting
FZ Tijent, P Voss, M Faqir - Materials Today Energy, 2023 - Elsevier
Photoelectrochemical (PEC) water splitting is a promising approach for hydrogen production
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …
using solar energy with zero emissions. However, the solar-to-hydrogen efficiency (STH) of …
Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis
Aberration corrected scanning transmission electron microscopy (STEM) with high angle
annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) …
annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) …
Nanoarchitectonics for wide bandgap semiconductor nanowires: Toward the next generation of nanoelectromechanical systems for environmental monitoring
Semiconductor nanowires are widely considered as the building blocks that revolutionized
many areas of nanosciences and nanotechnologies. The unique features in nanowires …
many areas of nanosciences and nanotechnologies. The unique features in nanowires …