Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found
extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic …

Abstract Knowledge of the mechanical properties and fatigue behavior of thin films is
important for the design and reliability of microfabricated devices. This study uses the bulge …

Atomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing
(ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

Impurities in aluminum nitride films prepared by plasma enhanced atomic layer deposition
using NH 3-, N 2/H 2-and N 2-based plasmas are investigated by combining time-of-flight …

Silicon oxide-based materials such as quartz and silica are widely used in
microelectromechanical systems (MEMS). One way to enhance the capability of their deep …

Quartz is widely used in microelectromechanical systems (MEMS). Especially, MEMS quartz
resonators are applied to sensors and serve as sensitive elements. The capability of deep …

In this work, thermally evaporated aluminum (Al) was used as hardmask (HM) to obtain
silicon microchannels (SiMCs), using an Inductively Coupled Plasma-Reactive Ion Etching …

Aluminum nitride (AlN) has an ultra-wide bandgap energy of 6.2 eV and is resistant to
chemical etching owing to its high chemical stability, making it intractable in the device …