Developing a low-temperature fabrication strategy of an amorphous InGaZnO (α-IGZO)
channel layer is a prerequisite for high-performance oxide-based thin film transistor (TFT) …

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

In this work, a non-toxic and environmentally friendly aqueous-solution-based method has
been adopted to prepare gadolinium-doped hafnium oxide (HfO 2) gate dielectric thin films …

High-performance InGaSnO thin film transistors are successfully fabricated with a reduced
thermal budget by an in-situ Ar plasma treatment process. This process does not require …

High-speed operation and low-power-consumption requirements have accelerated the
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …

The variation in energy bandgaps of amorphous oxide semiconducting SiZnSnO (a-SZTO)
has been investigated by controlling the oxygen partial pressure (O p). The systematic …

In the present work, the impact of purge time on the performance of TFTs was systematically
studied because both ZnO channel layers and Al 2 O 3 insulators were deposited using …

Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–
oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for …

In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high
performance and high stability, we optimize sputtering conditions to create devices based on …

The room temperature fabrication of amorphous oxide semiconductor thin film transistors
(TFTs) is essential for their applications in flexible electronics due to the low glass-transition …