The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
Molecular and Atomic Layer Deposition of Hybrid Polyimide–Al2O3 Gate Dielectrics for Flexible Electronic Devices
J Wang, Q Huang, Y Gao, N Shi, Q Ge… - Chemistry of …, 2022 - ACS Publications
Modern information technologies have tremendous demands on flexible electronic devices
such as thin-film transistors (TFTs). As the flexible TFT technology continues to advance, the …
such as thin-film transistors (TFTs). As the flexible TFT technology continues to advance, the …
Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment
The effective and high-quality integration of high-k dielectrics on two-dimensional (2D)
crystals is essential to the device structure engineering and performance improvement of …
crystals is essential to the device structure engineering and performance improvement of …
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
In this work, we present the results of an investigation into charge trapping in metal/high-k/In
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks
Dispersion in accumulation is a widely observed phenomenon in technologically important
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …
Integrated all‐optical switch with 10 ps time resolution enabled by ALD
The potential of GaAs‐based photonic crystals for fast all‐optical switching in the telecom
spectral range is exploited by controlling the surface recombination and, thereby, the carrier …
spectral range is exploited by controlling the surface recombination and, thereby, the carrier …
Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge
J Lehtiö, ZJ Rad, S Granroth, M Yasir… - Advanced Electronic …, 2021 - Wiley Online Library
Negative static charge and induced internal electric field have often been observed in the
interfaces between silicon and high‐κ dielectrics, for example Al2O3 and HfO2. The electric …
interfaces between silicon and high‐κ dielectrics, for example Al2O3 and HfO2. The electric …
Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
Nitrogen incorporation to produce negative fixed charge in Al2O3 gate insulator layers is
investigated as a path to achieve enhancement mode GaN device operation. A uniform …
investigated as a path to achieve enhancement mode GaN device operation. A uniform …
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect …
In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for
device passivation to realize a high-performance inversion-mode HfO 2/In 0.53 Ga 0.47 As …
device passivation to realize a high-performance inversion-mode HfO 2/In 0.53 Ga 0.47 As …
Improving the breakdown voltage, ON-resistance and gate-charge of InGaAs LDMOS power transistors
Recently, a lateral double-diffused metal-oxide-semiconductor (LDMOS) using In 0.53 Ga
0.47 As having an extended-p+(ep+) body has been shown to be better than a conventional …
0.47 As having an extended-p+(ep+) body has been shown to be better than a conventional …