Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Scandium-doped aluminum nitride for acoustic wave resonators, filters, and ferroelectric memory applications
Scandium-doped aluminum nitride (AlScN) has generated great research interest owing to
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
its unique properties. The wurtzite-structure AlScN is compatible with the complementary …
Controlling residual stress and suppression of anomalous grains in aluminum scandium nitride films grown directly on silicon
R Beaucejour, V Roebisch, A Kochhar… - Journal of …, 2022 - ieeexplore.ieee.org
Deposition of Aluminum Scandium Nitride (AlScN) films directly on Silicon at high Sc
alloying levels, with controlled stress, and free of anomalous grains (AOGs) is demonstrated …
alloying levels, with controlled stress, and free of anomalous grains (AOGs) is demonstrated …
Sub-GHz X-Cut Lithium Niobate S₀ Mode MEMS Resonators
This paper reports on the design, fabrication, and characterization of mode X-cut Lithium
Niobate Laterally Vibrating Resonators (LVRs) operating between 100 MHz and 1 GHz. In …
Niobate Laterally Vibrating Resonators (LVRs) operating between 100 MHz and 1 GHz. In …
Low Loss Al0.7Sc0.3N Thin Film Acoustic Delay Lines
reports novel aluminum scandium nitride (Al 0.7 Sc 0.3 N) thin film acoustic delay lines
(ADLs). Low loss ADLs are implemented on sputtered Al 0.7 Sc 0.3 N thin film using cross …
(ADLs). Low loss ADLs are implemented on sputtered Al 0.7 Sc 0.3 N thin film using cross …
Ultrathin Pt and Mo films on Al1–xScxN: an interface investigation
Aluminum scandium nitride (Al 1–x Sc x N) with attractive ferroelectric and piezoelectric
properties is a promising material for next-generation device applications. However, the …
properties is a promising material for next-generation device applications. However, the …
Aluminum nitride thin film based reconfigurable integrated photonic devices
In the past few decades, silicon photonics with complementary metal-oxide-semiconductor
(CMOS) process compatibility has been well developed and successfully applied to …
(CMOS) process compatibility has been well developed and successfully applied to …
Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes
In the past decade, aluminum scandium nitride (AlScN) with a high Sc content has shown
ferroelectric properties, which provides a new option for CMOS-process-compatible …
ferroelectric properties, which provides a new option for CMOS-process-compatible …
Spurious-Free S₁ Mode AlN/ScAlN-Based Lamb Wave Resonator With Trapezoidal Electrodes
Spurious modes (SMs) suppression and electromechanical coupling coefficient ()
improvement in Lamb wave resonators (LWRs) have always been the research hotspot. In …
improvement in Lamb wave resonators (LWRs) have always been the research hotspot. In …
Al0. 7Sc0. 3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2· Qm) over 146
This work presents the laterally vibrating Lamb wave resonators (LVRs) based on a 30%
aluminum scandium nitride (Al 0.7 Sc 0.3 N) thin film with three interdigited transducer pairs …
aluminum scandium nitride (Al 0.7 Sc 0.3 N) thin film with three interdigited transducer pairs …