Results Effect of silane flow rate on QW intermixing.—Figure 1a illustrates typical PL spectra
of capped (solid line) and uncapped (dotted line) QW structures after RTA at 950C. In this …

Interdiffusion can be either increased or decreased when annealing epitaxial layers covered
by an oxide of GaAs. AlGaAs/GaAs quantum wells (QWs) of different widths were grown by …

We investigated the influence of the deposition parameters of SiO x and SiN x capping
layers in the plasma-enhanced chemical vapor deposition on the band gap energy shift of …

Dielectric-cap quantum-well disordering of GaAs-AlGaAs multiple-quantum-well (MQW)
structure was carried out using SiN/sub x/capping layer grown by plasma enhanced …

In this work, impurity-free interdiffusion of GaAs/AlGaAs quantum wells was investigated as a
function of the quality of SiO x capping layers grown by plasma-enhanced chemical vapor …

We report on the correlation of atomic concentration profiles of diffusing species with the
blueshift of the quantum well luminescence from both as-grown and impurity free quantum …

[en] The dependence of impurity-free vacancy disordering (IFVD) of InGaAs/InGaAsP
quantum well (QW) structure with various semiconductor capping layers over the QW …

The multiple quantum well (MQW) structure is a good candidate to monolithically integrate
lasers and waveguides for realizing photonic integrated circuits. For such an application …

This work studied the implementation of multi-wavelength laser diodes on a single substrate
through the position-dependent bandgap modification of the In 0.2 Ga 0.8 As/GaAs multiple …

Semiconductor Quantum Well Intermixing is an international collection of research results
dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to …