Hydrogenated nanocrystalline silicon (nc-Si: H) films were deposited by using 13.56 MHz
plasma-enhanced chemical vapor deposition at 260 C by means of a silane (Si H 4) plasma …

The plasma processes and growth reactions involved in the deposition of amorphous,
polymorphous and microcrystalline silicon thin films are reviewed. The reference being a-Si …

We report on direct evidence of ultrafast carrier dynamics displaying features on the
picosecond time scale in microcrystalline silicon (μc-Si: H). The dynamics of photogenerated …

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped
amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline …

The present work deals with the optimization of nano-crystalline silicon films at a low
substrate temperature, using planar inductively coupled low pressure plasma CVD. The …

Publisher Summary This chapter describes the deposition of hydrogenated amorphous
silicon (a-Si: H) and related materials by employing a low-temperature, low-density plasma …

The low frequency noise technique is used to obtain the volume profile of traps in the SiN x
gate dielectric of hydrogenated amorphous silicon (a-Si: H) and nanocrystalline silicon (nc …

This paper addresses the current trends in research and development for:(1) Thin film
transistors (TFTs) on plastic substrates,(2) low-temperature poly-silicon (LTPS) for the pixel …

We report the fabrication and characterization of bottom-gate and top-gate nanocrystalline
silicon (nc-Si: H) thin-film transistors (TFTs) with amorphous-silicon nitride (a-SiN x: H) as the …

Amorphous (α-) InGaZnO 4 thin film transistors (TFTs) were fabricated on polyimide clean-
room tape at low temperature (< 100 C)⁠. The α-InGaZnO 4 films with an n-type carrier …