An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

We report on the effects of spacer thickness on the external quantum efficiency EQE of the
solar cells with Ge islands embedded into the intrinsic region of the Si-based pin diode. The …

We report on the effects of spacer thickness on the external quantum efficiency (EQE) of the
solar cells with Ge islands embedded into the intrinsic region of the Si-based pin diode. The …

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the
most completely researched and discussed in the technical literature. However, new effects …

This study investigated the formation mechanism of Ge/Si/Ge composite islands on Si (001)
using a combination of selective wet chemical etching, atomic force microscopy and high …

We have deposited a 12nm thick Ge layer on Si (100) held at 200° C by thermal evaporation
under high vacuum conditions. Upon subsequent thermal annealing in vacuum, self …

We present a structural analysis of Ge islands on Si (100) substrates using grazing
incidence small angle X-ray scattering (GISAXS). GISAXS is a nondestructive and powerful …

It is demonstrated that a multilayer structure of Ge quantum dots deposited on Si spacer
layers in the intrinsic region of a Si pin diode exhibits a strong photovoltaic response in the …

The dark current–voltage (J–V) characteristics and the conversion efficiency of the solar
cells with embedded stacked Ge islands in the intrinsic layer were investigated. These …

We show that a strong photovoltaic response in the infrared region of the solar spectrum (1.1–
1.4 μm wavelength) is obtained by inserting a multilayer structure of germanium quantum …