Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz
This paper presents the design, implementation, and experimental results of a highly
efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare …
efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare …
Complementary split ring resonator-inspired multi-HCN for implementation of an efficiency-enhanced inverse class-F2, 3 PA
M Boumalkha, M Lahsaini, MEH Archidi - Computers and Electrical …, 2024 - Elsevier
This article introduces a conceptual framework for enhancing the efficiency of an inverse
class-F 2, 3 (F 2, 3− 1) power amplifier (PA) through the incorporation of an innovative …
class-F 2, 3 (F 2, 3− 1) power amplifier (PA) through the incorporation of an innovative …
An RF carrier bursting system using partial quantization noise cancellation
This paper introduces a method for bandpass cancellation of the quantization noise
occurring in high efficiency, envelope pulsed transmitter architectures-or carrier bursting. An …
occurring in high efficiency, envelope pulsed transmitter architectures-or carrier bursting. An …
Highly efficient GaN-HEMT power amplifiers at 3.5 GHz and 5.5 GHz
This paper reports the design, implementation, and experimental results of two high
efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach …
efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach …
[PDF][PDF] Analysis and design of the biasing network for 1 ghz bandwidth rf power amplifier
The bandwidth of the wireless communication has increased due to the various applications
of the wireless devices. A radio frequency power amplifier (RFPA) is one of the crucial …
of the wireless devices. A radio frequency power amplifier (RFPA) is one of the crucial …
3.5-3.8 GHz class-E balanced GaN HEMT power amplifier with 20W Pout and 80% PAE
O Kizilbey, O Palamutçuogullari… - IEICE Electronics …, 2013 - jstage.jst.go.jp
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and
realized for 3.5–3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN …
realized for 3.5–3.8 GHz band by using Gallium Nitride high electron mobility transistor (GaN …
Effect of second and third harmonic input impedances in a class-F amplifier
S Abbasian, T Johnson - Progress In Electromagnetics Research C, 2015 - jpier.org
In this paper, the design of a class-F radio frequency power amplifier with a multiharmonic
input transmission line network is presented. Harmonic signal components at the gate come …
input transmission line network is presented. Harmonic signal components at the gate come …
[PDF][PDF] Improvement of non-linear power amplifier performance using Doherty technique
This paper presents a new method for improving the performances of the nonlinear power
amplifier using the Doherty concept. The proposed Doherty topology employs class F as …
amplifier using the Doherty concept. The proposed Doherty topology employs class F as …
High efficiency continuous mode RF power amplifier based on second and third harmonic manipulation
Continuous mode class-J radio-frequency (RF) power amplifier is a promising technique that
extends the operating bandwidth of the conventional class-B power amplifier. However, the …
extends the operating bandwidth of the conventional class-B power amplifier. However, the …
[PDF][PDF] Advanced High Efficiency and Broadband Power Amplifiers Based on GaN HEMT for Wireless Applications.
M Iqbal - 2017 - core.ac.uk
In advanced wireless communication systems, a rapid increase in the mobile data traffic and
broad information bandwidth requirement can lead to the use of complex spectrally efficient …
broad information bandwidth requirement can lead to the use of complex spectrally efficient …