Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations
Y Gao, Q Xie, T Gao, W Yang, L Li, Y Liu, Q Chen… - Surfaces and …, 2023 - Elsevier
Recently, researchers have increasingly used computational modeling and simulation
techniques to comprehend the atomic layer deposition (ALD) process, design novel …
techniques to comprehend the atomic layer deposition (ALD) process, design novel …
Effect of stepped Si (001) substrate on Cu thin film growth
M Lablali, H Mes-adi, A Eddiai… - … Metrology and Properties, 2023 - iopscience.iop.org
The growth processes of Cu thin film on stepped Si (001) substrate were investigated using
molecular dynamics simulation. The modified embedded atom method was used to describe …
molecular dynamics simulation. The modified embedded atom method was used to describe …
Atomistic mechanism of AlCu thin film alloy growth on trenched Si substrate
M Lablali, H Mes-adi, A Eddiai, M Mazroui - Computational Materials …, 2024 - Elsevier
Molecular dynamics simulation was employed to study the growth mechanisms of an AlCu
thin film on a trenched Si (0 0 1) substrate. The atomic interactions between Al, Cu, and Si …
thin film on a trenched Si (0 0 1) substrate. The atomic interactions between Al, Cu, and Si …
Crystal Structure and Surface Morphology of GaN Thin Films Grown on Different Patterned AlN Substrate Surfaces
S Mao, T Gao, L Li, Y Gao, Z Zhang… - Crystal Growth & …, 2024 - ACS Publications
Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …
Cu thin film growth on stepped Si substrate: Effects of incident energy and thermal annealing
M Lablali, H Mes-Adi, A Eddiai, K Abderrafi… - Journal of Crystal …, 2024 - Elsevier
The existence of defects on the substrate surface is unavoidable and has a significant
impact on the determination of surface properties. Among the prevalent types of defects …
impact on the determination of surface properties. Among the prevalent types of defects …
Effects of structure formation on the surface morphology and internal microstructure of GaAs thin films
W Tian, Q Chen, Z Bian, Y Gao, Q Xie… - Journal of Physics …, 2024 - iopscience.iop.org
Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron
saturation drift rate, and other irreplaceable semiconducting properties. They play an …
saturation drift rate, and other irreplaceable semiconducting properties. They play an …
Molecular Dynamics Study on the Mechanism of Gallium Nitride Radiation Damage by Alpha Particles
Y Liu, Z Xiong, X Ouyang - Materials, 2023 - mdpi.com
In special applications in nuclear reactors and deep space environments, gallium nitride
detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the …
detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the …