Recently, researchers have increasingly used computational modeling and simulation
techniques to comprehend the atomic layer deposition (ALD) process, design novel …

The growth processes of Cu thin film on stepped Si (001) substrate were investigated using
molecular dynamics simulation. The modified embedded atom method was used to describe …

Molecular dynamics simulation was employed to study the growth mechanisms of an AlCu
thin film on a trenched Si (0 0 1) substrate. The atomic interactions between Al, Cu, and Si …

Gallium nitride (GaN) is frequently used as the primary material for manufacturing high-
brightness light-emitting diodes (LEDs). Recently, atomic layer deposition has become …

The existence of defects on the substrate surface is unavoidable and has a significant
impact on the determination of surface properties. Among the prevalent types of defects …

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron
saturation drift rate, and other irreplaceable semiconducting properties. They play an …

In special applications in nuclear reactors and deep space environments, gallium nitride
detectors are subject to irradiation by α-particles. Therefore, this work aims to explore the …